HgCdTe status review with emphasis on correlations, native defects and diffusion
- 1 December 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (12C), C59-C70
- https://doi.org/10.1088/0268-1242/6/12c/012
Abstract
The authors review the current status of knowledge of fundamental properties of the alloy Hg1-xCdxTe. The most vexing questions are about its correlation state. Several different experiments now suggest it is highly correlated, but no theory predicts this result. They also discuss other properties, including dislocations at interfaces, the residual donor, worms, surface segregation and its impact on passivation, and concentration fluctuations. The forces driving these phenomena, where they are known, will be presented. Most of the paper focuses on the following: correlations; native defects, formation enthalpies and entropies; native defect equilibria with mercury gas and with tellurium inclusions; and self-diffusion coefficient activation energies including its contribution from migration energies. They will take advantage of new first-principles, high-accuracy calculations to help explain the experimental situation. The calculations predict that the main native defects found in alloys equilibrated at low Hg pressures are Hg vacancies, while at high Hg pressures they are Hg interstitials, and, surprisingly, Hg antisites.Keywords
This publication has 33 references indexed in Scilit:
- Infrared material requirements for the next generation of systemsSemiconductor Science and Technology, 1991
- Review of the status of computational solid-state physicsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Hg1-xCdxTe: Defect Structure OverviewMRS Proceedings, 1990
- Surface segregation in pseudobinary alloysPhysical Review B, 1989
- Dislocations in HgCdTe/CdTe and HgCdTe/CdZnTe heterojunctionsJournal of Vacuum Science & Technology A, 1987
- Inhomogeneity model for anomalous Hall effects in n-type Hg0.8Cd0.2Te liquid-phase-epitaxy filmsJournal of Applied Physics, 1985
- The effect of low temperature annealing on defects, impurities, and electrical properties of (Hg,Cd)TeJournal of Vacuum Science & Technology A, 1985
- Surface and bulk structural defects in Hg1−xCdxTeJournal of Vacuum Science & Technology A, 1985
- Band gap variation and lattice, surface, and interface ‘‘instabilities’’ in Hg1−xCdxTe and related compoundsJournal of Vacuum Science & Technology A, 1983
- Lattice defects in (Hg,Cd)Te: Investigations of their nature and evolutionJournal of Vacuum Science & Technology A, 1983