C-V measurement and modelization of GaInAs/InP heterointerface with traps

Abstract

GaInAs/InP heterojunction grown by metalorganic vapor‐phase epitaxy has been studied by C‐V measurements against temperature and frequency. The apparent concentration profiles led to the deduction that both the apparent band discontinuity and the interface charge density are dependent on both the temperature and the frequency. This behavior is explained by assuming a null actual conduction‐band discontinuity and the important presence of traps at the heterojunction. A model of C‐V measurement has been developed in order to account for the presence of traps and the effect of frequency. Simulation results confirm the consistency of the hypothesis of a null actual conduction‐band discontinuity.