On the gain spectrum of highly excited GaAs
- 31 October 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 36 (4), 381-382
- https://doi.org/10.1016/0038-1098(80)90077-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Gain Spectrum of an e–h Liquid in Direct Gap SemiconductorsPhysica Status Solidi (b), 1980
- Coulomb effects on the gain and absorption spectra of the electron-hole plasma in GaAsSolid State Communications, 1980
- Optical properties of semiconductors under intense laser fieldsPhysics Reports, 1978
- Direct determination of reduced band gap and chemical potential in an electron-hole plasma in high-purity GaAsSolid State Communications, 1976
- Electron‐hole drops in Ge: Correlation effects in the emission line shapePhysica Status Solidi (b), 1975
- Coulomb Effects on the Gain Spectrum of SemiconductorsPhysical Review Letters, 1973