Resonant first- and second-order Raman scattering in ZnTe
- 15 January 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 11 (2), 746-753
- https://doi.org/10.1103/physrevb.11.746
Abstract
The resonance of the first- and second-order Raman spectra of ZnTe has been measured at room temperature in the region of the edge using tunable cw dye lasers and ion lasers. The allowed first-order TO scattering is always weaker than the corresponding component of the allowed LO scattering, a fact which is interpreted in terms of the electro-optic coefficient. The forbidden LO scattering for the parallel-parallel polarization (Fröhlich interaction) becomes stronger than the allowed scattering near resonance. The second-order spectra were separated into irreducible components. Their most strongly resonant parts are a resonance ( component) and an LO- resonance ( component). These resonances are interpreted as iterated first-order processes involving the Fröhlich interaction. The rest of the second-order spectra resonates in a manner similar to the allowed first-order spectra. It is therefore attributed to electron-two-phonon interaction vertices. Its strongest feature corresponds to 2TA overtones ( component). 2TO and 2LO overtone scattering is negligible. From the ratio of first- to second-order scattered intensities and the deformation potential for the electron-one-phonon interaction, values of several electron-two-phonon deformation potentials are determined.
Keywords
This publication has 20 references indexed in Scilit:
- Resonant Raman scattering in GaP in the E0 − E0 + Δ0 regionSolid State Communications, 1973
- Orientation‐dependent resonant raman scattering in InSb and GaSb at the E1–E1+Δ1 regionPhysica Status Solidi (b), 1973
- Resonant First- and Second-Order Raman Scattering in GaPPhysical Review B, 1973
- Intrinsic piezobirefringence of several semiconducting chalcogenidesJournal of Physics and Chemistry of Solids, 1973
- Resonance Raman Scattering in InSb near theTransitionPhysical Review Letters, 1972
- Resonant Raman scattering in germaniumSolid State Communications, 1972
- Pseudopotential calculation of the Raman tensor for homopolar semiconductorsSolid State Communications, 1970
- Contributions to Optical Nonlinearity in GaAs as Determined from Raman Scattering EfficienciesPhysical Review B, 1969
- Resonant Raman Effect in SemiconductorsPhysical Review B, 1969
- Measurements of the electrooptic effect in CdS, ZnTe, and GaAs at 10.6 micronsIEEE Journal of Quantum Electronics, 1968