Measuring Ge segregation by real-time stress monitoring during Si1−xGex molecular beam epitaxy

Abstract

Real‐time stress measurements during Si1−x Ge x /Si molecular beam epitaxy are used to dynamically monitor Gesurface segregation. Segregation during alloy growth produces a change in the surface stress that offsets the coherency stress in the pseudomorphic film. We outline a method for analyzing the stress evolution kinetics to determine the alloy composition profile resulting from segregation.