Plasma-hydrogenation effects and the thickness dependence of electrical properties and E.S.R. in undoped CVD a-Si
- 1 February 1983
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 47 (2), 139-149
- https://doi.org/10.1080/13642812.1983.9728426
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous siliconPhilosophical Magazine Part B, 1980
- Hydrogenation of evaporated amorphous silicon films by plasma treatmentApplied Physics Letters, 1978
- Influence of interface charges on transport measurements in amorphous silicon filmsJournal de Physique, 1978
- Photoconductivity and recombination in doped amorphous siliconPhilosophical Magazine, 1977