The effects of carrier-concentration-dependent bandgap narrowing on bipolar-device characteristics

1 May 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 32 (5), 874-876
https://doi.org/10.1109/t-ed.1985.22041

Abstract

A modeling of carrier-concentration-dependent bandgap narrowing in silicon bipolar transistors is proposed. Using a two-dimensional numerical simulation program, the effects of this phenomenon on the bipolar-device characteristics under high-level injection conditions have been studied. Transistor β falloff slows down due to the carrier-concentration-dependent bandgap narrowing, whereas there is no appreciable effect on cutoff frequency fTversus Jccharacteristics.

Keywords

BIPOLAR TRANSISTORS
HELIUM
NUMERICAL SIMULATION
SILICON
CUTOFF FREQUENCY
NEODYMIUM
PHOTONIC BAND GAP

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