A method for analysis and profiling of boron, carbon and oxygen impurities in semiconductor wafers by recoil atoms in heavy ion beams
- 1 August 1984
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 4 (3), 396-398
- https://doi.org/10.1016/0168-583x(84)90585-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- High-resolution Rutherford backscattering spectrometry and the analysis of very thin silicon nitride layersNuclear Instruments and Methods in Physics Research, 1982
- Determination of oxygen in thin films with the 16O(3He, pγ)18F reactionNuclear Instruments and Methods, 1980
- Some practical applications of the observation of the 16O-direct proton capture reaction with a Ge(Li) detectorNuclear Instruments and Methods, 1971
- Use of the Nuclear Reaction O16(d, p)O17 to Study Oxygen Diffusion in Solids and its Application to ZirconiumJournal of Applied Physics, 1968