Electron-irradiation effect in the Auger analysis of SiO2

Abstract

The principal features in the Auger electron spectrum from a SiO₂ surface are presented. The primary electron beam bombarding the SiO₂ surface has a profound influence on its composition, in that it dissociates the surface leaving it enriched in elemental silicon. The main parameters affecting the dissociation are found to be the electron‐beam current density, the beam energy, the presence of impurities on the surface, and the residual gas pressure of oxygen. The effects of these parameters on the dissociation have been studied and some suggestions to minimize the dissociation are made. The results of the present study do not agree with the mechanism proposed by Lineweaver for oxygen release from electron‐irradiated glass.