A study of SiO layers on Si using cathodoluminescence spectra
- 1 July 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (7), 825-839
- https://doi.org/10.1016/0038-1101(73)90179-2
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Parallel between Surface States at the Si–SiO2 Interface and the B2 Center in Irradiated SiO2Journal of Vacuum Science and Technology, 1972
- Tracer Investigation of Hydroxyls in SiO[sub 2] Films on SiliconJournal of the Electrochemical Society, 1971
- Model for Radiation-Induced Charge Trapping and Annealing in the Oxide Layer of MOS DevicesJournal of Applied Physics, 1969
- A simple non-destructive method of measuring the thickness of transparent thin films between 10 and 600 nmSolid-State Electronics, 1968
- Effect of Oxide Hydration on Surface Potential of Oxidized P-Type SiliconJournal of the Electrochemical Society, 1965
- Radiation effects in fused silica and α-Al2O3Discussions of the Faraday Society, 1961
- Trapped Electrons in Irradiated Quartz and Silica: I, Optical AbsorptionJournal of the American Ceramic Society, 1960
- Radiation Damage in InsulatorsPhysical Review B, 1953
- Luminescence effects associated with the production of silicon monoxide and with oxygen deficit in silicaTransactions of the Faraday Society, 1951
- Short Duration Phosphorescence in Fused QuartzPhysical Review B, 1929