Partial Polygonization in Impure Copper Crystals
- 1 July 1957
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 28 (7), 787-791
- https://doi.org/10.1063/1.1722856
Abstract
A method to produce etch pits in OFHC copper by electroetching is presented and used to show that ``partial polygonization'' occurs in OFHC copper at or above 900°C. This does not seem to occur in 99.999% copper, indicating that impurities might facilitate climbing of dislocations at high temperatures.Keywords
This publication has 4 references indexed in Scilit:
- Observations of Dislocation Glide and Climb in Lithium Fluoride CrystalsJournal of Applied Physics, 1956
- A study of 〈112〉 edge dislocations in bent silicon-iron single crystalsActa Metallurgica, 1956
- Polygonization in copperPhilosophical Magazine, 1956
- A thermal etching technique for revealing dislocations in silverActa Metallurgica, 1955