Observation of the Magnetic-Field-Induced Semimetal-Semiconductor Transition in Bi under Megagauss Fields

Abstract
The magnetic-field-induced semimetal-semiconductor transition has been observed in Bi under very high magnetic fields parallel to the binary axis. The transition was observed at 88 T as a change of the transmission of the far-infrared radiation at 337-μm wavelength at low temperature. The field position of the transition as well as the positions of absorption peaks arising from the Shubnikov-de Haas effect were analyzed in terms of newly determined band parameters.