Three-terminal superconducting device using a Si single-crystal film

Abstract

A three-terminal superconducting device composed of a semiconductor-coupled Josephson junction and an oxide-insulated gate is fabricated. A p-type Si single-crystal film having a 100-nm thickness is used for the semiconductor layer. Two superconducting electrodes of the Josephson junction correspond to source and drain electrodes of the three-terminal device. Josephson tunneling current flows between source and drain electrodes, and is controlled by the gate bias voltage.