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Study of Si-wafer directly bonded interface effect on power device characteristics
Home
Publications
Study of Si-wafer directly bonded interface effect on power device characteristics
Study of Si-wafer directly bonded interface effect on power device characteristics
HO
H. Ohashi
H. Ohashi
KF
K. Furukawa
K. Furukawa
MA
M. Atsuta
M. Atsuta
AN
A. Nakagawa
A. Nakagawa
KI
K. Imamura
K. Imamura
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1 January 1987
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1987.191519
Abstract
No abstract available
Keywords
BONDED INTERFACE
POWER DEVICE
DEVICE CHARACTERISTICS
INTERFACE EFFECT
SI WAFER
WAFER DIRECTLY
Cited by 8 articles