A variable-work-function polycrystalline-Si/sub 1-x/Ge/sub x/ gate material for submicrometer CMOS technologies
- 1 October 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (10), 533-535
- https://doi.org/10.1109/55.119180
Abstract
P/sup +/ poly-Si/sub 1-x/Ge/sub x/ is a promising candidate for the gate material in submicrometer CMOS technologies due to its improved resistivity and its work function (which can be modified to achieve more-scalable NMOS and PMOS devices). The work function of P/sup +/ poly-Si/sub 1-x/Ge/sub x/ decreases with increasing Ge content, by more than 0.3 V from 0 to 60%. Because of its ease of formation and compatibility with VLSI fabrication techniques, assimilating poly-Si/sub 1-x/Ge/sub x/ into an existing CMOS process should be relatively simple.Keywords
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