Exciton-Donor Complexes in Semiconductors

Abstract

The binding energy of an exciton bound to a neutral donor is estimated using the quantum-mechanical variational principle. We obtain the dissociation energy of an exciton-donor complex as a function of the ratio of the effective mass of the electron to that of the hole. The theoretical analysis is carried out within the framework of the effective-mass approximation, assuming a simple model of a semiconductor with parabolic energy bands.