Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structure

Abstract

Using a micron-sized photoluminescence (PL) probe enables us to study single islandlike interface defects of a thin GaAs/AlGaAs quantum well. The bound exciton ground state locally emits a distinct sharp line. With increasing excitation of this quantum dot level additional transition lines emerge at lower energy. They are attributed to localized biexciton states. The biexciton correlation energy is about 4 meV. A distinct two-photon resonant absorption peak of the biexciton ground state is observed in PL excitation spectroscopy. Its linewidth is only about 30 μeV. The spectra and their polarization properties are discussed on the basis of a discrete level scheme and the Pauli exclusion principle.