Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
- 1 December 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (12B), L1645-1647
- https://doi.org/10.1143/jjap.36.l1645
Abstract
InAs are grown on vicinal GaAs (110) surfaces with giant steps using molecular beam epitaxy. Atomic force microscopy, X-ray photoelectron spectroscopy and transmission electron microscopy show that uniform and well-aligned InAs wires and dots are formed on the facets at giant step edges due to the accumulation of InAs. This accumulation is only observed in a relatively high growth temperature range (580–600° C) and not at low temperatures.Keywords
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