RAMAN SPECTROSCOPY CHARACTERIZATION OF POLYCRYSTALLINE GaP THIN FILMS GROWN BY MO-CVD PROCESS USING [Et2Ga - PEt2]3 AS ONLY SOURCE

Abstract

Growth of polycrystalline GaP layers has been obtained between 650 and 775°C, by low pressure metalorganic chemical vapor deposition, using the only molecule [Et2Ga-PEt2]3 as element source. The disorder has been characterized by Raman spectroscopy