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Improved performance of GaAs microwave field-effect transistors with via-connections through the substrate
Home
Publications
Improved performance of GaAs microwave field-effect transistors with via-connections through the substrate
Improved performance of GaAs microwave field-effect transistors with via-connections through the substrate
LD
L.A. D'Asaro
L.A. D'Asaro
JD
J.V. DiLorenzo
J.V. DiLorenzo
HF
H. Fukui
H. Fukui
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1 January 1977
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1977.189261
Abstract
No abstract available
Keywords
INDUCTANCE
FREQUENCY
GALLIUM ARSENIDE
ELECTRODES
SCHOTTKY BARRIER
GOLD
ETCHING
FIELD EFFECT TRANSISTOR
Cited by 5 articles