Tunnel injection active region in an oxide-confined vertical-cavity surface-emitting laser
- 1 June 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (6), 716-718
- https://doi.org/10.1109/68.584967
Abstract
Data are presented on oxide-confined AlGaAs-GaAs-InGaAs VCSEL's that use high-index half-wave GaAs spacer layers and electronic tunnel injection and confinement. To our knowledge, this is the first demonstration of tunnel injection in a vertical-cavity laser. Threshold currents range from 344 /spl mu/A for a 6.5-/spl mu/m diameter device to 151 /spl mu/A for a 1-/spl mu/m diameter device. The relatively high threshold currents are attributed to a detuned cavity and higher order transverse-mode operation.Keywords
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