Enhanced crystallographic selectivity in molecular beam epitaxial growth of GaAs on mesas and formation of (001)-(111)B facet structures for edge quantum wires
- 5 August 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (6), 700-702
- https://doi.org/10.1063/1.105370
Abstract
The crystallographic selectivity of molecular beam epitaxial growth of GaAs on mesas consisting of a (001) surface and (111)B facets is studied systematically. It was found that the growth rate on (111)B facets can be drastically reduced to ∼1/30 of the growth rate on (001) surface by the reduction of As flux on the (111)B facets. This enhanced selectivity results from the enhanced intersurface migration, and strongly indicates a feasibility of forming microheterostructures needed for the fabrication of edge quantum wires on (001)‐(111)B mesas.Keywords
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