Role of carrier diffusion in lattice heating during pulsed laser annealing
- 1 January 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (1), 37-38
- https://doi.org/10.1063/1.91306
Abstract
A calculation is presented which demonstrates that diffusion of the hot, dense carriers generated in pulsed laser annealing of Si can substantially reduce the rate at which energy is transferred to the semiconductor lattice near the surface. The extent of the region in which this energy transfer occurs is consequently increased.Keywords
This publication has 11 references indexed in Scilit:
- Calculation of the dynamics of surface melting during laser annealingApplied Physics Letters, 1979
- Abrupt Ga1−xAlxAs-GaAs quantum-well heterostructures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1979
- The effect of free-carrier absorption on the annealing of ion-implanted silicon by pulsed lasersApplied Physics Letters, 1979
- A computer simulation of laser annealing silicon at 1.06 μmApplied Physics Letters, 1979
- Temperature rise induced by a laser beam II. The nonlinear caseApplied Physics Letters, 1978
- Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed siliconApplied Physics Letters, 1978
- Laser annealing shows promise for making p-n junctionsPhysics Today, 1978
- Some features of laser annealing of implanted silicon layersRadiation Effects, 1978
- Laser heating and melting of thin films on low-conductivity substratesJournal of Applied Physics, 1975
- Shapes of Two-Phonon Recombination Peaks in SiliconPhysical Review B, 1970