High-efficiency CuInxGa1−xSe2 solar cells made from (Inx,Ga1−x)2Se3 precursor films
- 11 July 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (2), 198-200
- https://doi.org/10.1063/1.112670
Abstract
In, Ga, and Se were coevaporated to form precursor films of (Inx,Ga1−x)2Se3. The precursors were then converted to CuInxGa1−xSe2 by exposure to a flux of Cu and Se. The final films were smooth, with tightly packed grains, and had a graded Ga content as a function of film depth. Photovoltaic devices made from these films showed good tolerance in device efficiency to variations in film composition. A device made from these films resulted in the highest total‐area efficiency measured for any non‐single‐crystal, thin‐film solar cell, at 15.9%.Keywords
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