Distribution of Electron-Bombardment-Induced Radiation Defects with Depth in Silicon
- 1 August 1963
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (8), 2146-2149
- https://doi.org/10.1063/1.1702704
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Radiation Defect Introduction Rates in- and-Type Silicon in the Vicinity of the Radiation Damage ThresholdPhysical Review B, 1962
- Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage ThresholdsPhysical Review B, 1958
- Electron-Bombardment Damage in SiliconPhysical Review B, 1958
- Theory of Electron PenetrationPhysical Review B, 1955
- The Coulomb Scattering of Relativistic Electrons by NucleiPhysical Review B, 1948
- The velocity distribution of β-particles after passing through thin foilsProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1928