Impact ionization coefficients for electrons and holes in In0.14Ga0.86As
- 15 September 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (6), 330-332
- https://doi.org/10.1063/1.88489
Abstract
We report the measurement of impact ionization rates for electrons and holes in the direct band‐gap semiconductor alloy In0.14Ga0.86As. Our results show clearly that the ionization rate for holes is greater than that for electrons. The measurments were made for electric fields between 2.6×105 and 3.4×105 V cm−1. In this range, the ionization coefficients can be expressed as α=α∞ exp(‐A/E) for electrons and β=β∞ exp(‐B/E) for holes with α∞=1.0×109 cm−1, A=3.6×106 V cm−1, and β∞=1.3×108 cm−1, B=2.7×106 V cm−1.Keywords
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