Atomic Defects in Transition Metal Carbides and SiC Studied by Positron Annihilation
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Silicon carbide (SiC)—Recent results in physics and in technologyPublished by Springer Nature ,2007
- Superstructures of Non-Stoichiometric Interstitial Compounds and the Distribution Functions of Interstitial AtomsPhysica Status Solidi (a), 1993
- Positron lifetime in non-stoichiometric carbides with a B1(NaCl) structureJournal of Physics: Condensed Matter, 1993
- Positron Affinities for CarbidesMaterials Science Forum, 1992
- High-Temperature Equilibrium Vacancy Formation in Ceramic Materials Studied by Positron AnnihilationMaterials Science Forum, 1992
- Electron irradiation damage in stoichiometric and substoichiometric tantalum carbides TaCxpart 1: Thershold displacement energiesRadiation Effects and Defects in Solids, 1991
- Electron-irradiation-induced crystalline to amorphous transition in α-Sic single crystalsPhilosophical Magazine Part B, 1990
- Defects in semiconductors after electron irradiation or in high-temperature thermal equilibrium, as studied by positron annihilationJournal of Physics: Condensed Matter, 1989
- A Study of the Atomic Ordering in the Niobium Carbide Using the Magnetic Susceptibility MethodPhysica Status Solidi (a), 1984
- Neutron and electron radiation defects in titanium and tantalum monocarbides: An electrical resistivity studyRadiation Effects, 1981