Influence of illumination on MIS capacitances in the strong inversion region
- 1 November 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 14 (11), 777-780
- https://doi.org/10.1109/t-ed.1967.16106
Abstract
A simple analysis is presented of the effect of illumination on MIS capacitance in the strong inversion region. The two mechanisms responsible for the increase of capacitance under illumination are described: the decrease of the time constant generation of the inversion layer, and the decrease of the space-charge region under illumination. The theoretical results are compared with the experimental data on silicon and tellurium MIS capacitances.Keywords
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