High Burnout Gallium Arsenide Schottky Barrier Diodes
- 1 January 1972
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper discusses the results of a programme to investigate the burnout phenomena of gallium arsenide Schottky barrier mixer diodes with regard to radar system t.r. cell leakage, and describes the performance of X-band high burnout diodes.Keywords
This publication has 1 reference indexed in Scilit:
- The Development of Gallium Arsenide Schottky Barrier Diodes as Mixers and DetectorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1969