A study of grown-in impurities in silicon by deep-level transient spectroscopy
- 30 November 1983
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 26 (11), 1039-1051
- https://doi.org/10.1016/0038-1101(83)90001-1
Abstract
No abstract availableKeywords
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