High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interface
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (9), 805-807
- https://doi.org/10.1063/1.92088
Abstract
Mobility of the two‐dimensional electron gas as high as 61 500 cm2/V sec, with a carrier concentration of 5.7×1011 cm−2, was obtained at 66 K in a selectively doped GaAs/n‐AlGaAs heterojunction structure grown by molecular beam epitaxy. This mobility is a factor of 2–3 larger than any reported so far in similar structures.Keywords
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