Charge trapping and dielectric breakdown in MOS devices in 77–400 K temperature range
- 30 September 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (9), 767-775
- https://doi.org/10.1016/0038-1101(89)90011-7
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Performance and hot-carrier effects of small CRYO-CMOS devicesIEEE Transactions on Electron Devices, 1987
- Reliability of 6-10 nm thermal SiO2films showing intrinsic dielectric integrityIEEE Transactions on Electron Devices, 1985
- Time-dependent-dielectric breakdown of thin thermally grown SiO2filmsIEEE Transactions on Electron Devices, 1985
- Electron trapping in SiO2 at 295 and 77 °KJournal of Applied Physics, 1979
- 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraintsIEEE Transactions on Electron Devices, 1979
- Thermal reemission of trapped electrons in SiO2Journal of Applied Physics, 1978
- Electron trapping in electron-beam irradiated SiO2Journal of Applied Physics, 1978
- Very small MOSFET's for low-temperature operationIEEE Transactions on Electron Devices, 1977
- Avalanche Injection of Holes into SiO2IEEE Transactions on Nuclear Science, 1977
- Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °KJournal of Applied Physics, 1976