Contactless microwave study of shallow traps in thin-film CdSe

Abstract

The contactless microwave technique was used to measure light-induced transients in the power absorption by thin films of polycrystalline CdSe. Because the rise time of the detector was 500 ns, the analysis was limited 1 μsec or longer. Measurement of these transients at a number of fixed frequencies across the ‘‘dark’’ resonance frequency made reconstruction of the difference signal possible. This signal, which represents the difference between the ‘‘dark’’ and ‘‘light’’ Lorentz resonance curves, was determined at various times during the decay. Analysis of these signals provided the changes in the real and imaginary parts of the dielectric constant as a function of time. The decays of these parameters were characterized by the sum of two exponential terms: ${\mathrm{\tau }}_1$=16.9 μsec and ${\mathrm{\tau }}_2$=261.5 μsec for the change in the imaginary part, and ${\mathrm{\tau }}_1$=18.5 μsec and ${\mathrm{\tau }}_2$=283 μsec for the change in the real part. The close agreement of these values indicates the simultaneous presence of both trapped and free electrons having identical decay times. A mechanism consistent with these results involves rapid equilibration between the free electrons and those in the two shallow traps. Decay from each trap is the rate limiting step, and the time to reach thermodynamic equilibrium must be less than 500 ns.