Chemical vapor deposition of platinum for microelectronic applications has been studied with the aim of avoiding the radiation damage to dielectrics caused by sputter or e‐gun deposition. Two known CVD methods—the pyrolysis of Pt acetylacetonate and the reduction of —were tried and judged unsatisfactory for either purity or adherence. A novel method of Pt deposition using the trifluorophosphine complex is reported. The process is simple and reliable, and produces adherent bright films of crystals on a variety of substrates at 200°–300°C in 1 atm hydrogen. The Pt contains small amounts of residual phosphorus, mostly concentrated at the surface. Resistivity of 750Aå films is 1.8 times that of bulk Pt. MOS capacitors with CVD Pt field plates on both and alone have shown good stability under bias‐temperature aging. CVD Pt and Si interdiffuse readily to form ohmic or Schottky diode contacts.