Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors
- 13 November 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (20), 203107
- https://doi.org/10.1063/1.2387876
Abstract
Carbon-based nanostructures promise near ballistic transport and are being intensively explored for device applications. In this letter, the performance limits of carbon nanoribbon (CNR) field-effect transistors(FETs) and carbon nanotube(CNT)FETs are compared. The ballistic channel conductance and the quantum capacitance of the CNRFET are about a factor of 2 smaller than those of the CNTFET because of the different valley degeneracy factors for CNRs and CNTs. The intrinsic speed of the CNRFET is faster due to a larger average carrier injection velocity. The gate capacitance plays an important role in determining which transistor delivers a larger on current.Keywords
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