High energy ion implantation for C-MOS isolation n-wells technology: Problems related to the use of multicharged phosphorous ions in an industrial context
- 1 January 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 6 (1), 283-286
- https://doi.org/10.1016/0168-583x(85)90646-9
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Ion beam studies: Part IV: The use of multiply-charged and polyatomic ions in an implantation acceleratorNuclear Instruments and Methods, 1977