PHOTOEMISSION STUDIES OF INTERFACE BARRIER ENERGIES OF IRRADIATED MOS STRUCTURES
- 1 July 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (1), 3-5
- https://doi.org/10.1063/1.1653240
Abstract
The effects of ionizing radiation in large geometry MOS structures were studied by use of internal photoemission techniques. Barrier heights at both the silicon‐silicon dioxide and the silicon dioxide‐metal (chromium) interface were measured before and after irradiation in a Co60 gamma cell. It was determined that the measured barrier energy heights were considerably reduced by radiation‐induced oxide charge.Keywords
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