Pulsed laser deposition of oriented In2O3 on (001) InAs, MgO, and yttria-stabilized zirconia

Abstract

Oriented In₂O₃ films have been grown on (001) InAs, MgO, and YSZ substrates using pulsed laser deposition. The films in each case displayed a cube‐on‐cube orientation relation with respect to the substrate, as determined by in situ RHEED analysis and x‐ray θ–2θ measurements. X‐ray rocking curve full width at half‐maximum values as low as 1.3°, 1.5°, and 0.29° have been obtained for In₂O₃ layers on InAs, MgO, and YSZ, respectively. An oriented native surface oxide layer was employed to provide an appropriate epitaxial template for aligned growth of In₂O₃ on InAs substrates, while growths were carried out directly on MgO and YSZ. The not intentionally doped films displayed resistivities on the order of 10⁻⁴ Ω cm, with Hall mobilities of 50 cm²/V s measured for In₂O₃ deposited on YSZ substrates.