Cadmium-doped indium-phosphide light-emitting diode

1 January 1972

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 8 (21), 520-521
https://doi.org/10.1049/el:19720379

Abstract

Indium-phosphide light-emitting diodes have been prepared by liquid epitaxy with only one run and only one added dopant (cadmium). The diode-power efficiency was 0.07% at 300 K.

Keywords

SEMICONDUCTOR DOPING
CADMIUM DOPED LIQUID EPITAXY INDIUM PHOSPHIDE DIODE
LIGHT EMITTING DEVICES

Cited by 4 articles