Stimulated emission from Ga1-xAlxAs diodes at 77°K
- 1 January 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 4 (1), 35
- https://doi.org/10.1109/jqe.1968.1074909
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-xAlxAs p-n JUNCTIONS GROWN BY LIQUID-PHASE EPITAXYApplied Physics Letters, 1967