MBE HgCdTe heterostructure p-on-n planar infrared photodiodes
- 1 August 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (8), 1049-1053
- https://doi.org/10.1007/bf02817523
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Annealing effect on the P-type carrier concentration in low-temperature processed arsenic-doped HgCdTeJournal of Electronic Materials, 1993
- Planar p-on-n HgCdTe heterostructure photovoltaic detectorsApplied Physics Letters, 1993
- Key issues in HgCdTe-based focal plane arrays: An industry perspectiveJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Mercury cadmium telluride junctions grown by liquid phase epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Growth and characterization of P-on-n HgCdTe liquid-phase epitaxy heterojunction material for 11–18 μm applicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Molecular-beam epitaxy growth and i n s i t u arsenic doping of p-on-n HgCdTe heterojunctionsJournal of Applied Physics, 1991
- Infrared image sensorsOptical Engineering, 1991
- Long and middle wavelength infrared photodiodes fabricated with Hg1−x CdxTe grown by molecular-beam epitaxyJournal of Applied Physics, 1989
- p on n ion-implanted junctions in liquid phase epitaxy HgCdTe layers on CdTe substratesApplied Physics Letters, 1987