Base transport dynamics in a heterojunction bipolar transistor
- 24 November 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (21), 1481-1483
- https://doi.org/10.1063/1.97309
Abstract
We have used hot‐electron spectroscopy to study nonequilibrium electron transport in the base of a heterojunction bipolar transistor. Electrons injected from an n‐type AlGaAs emitter into a p‐type GaAs base were found to be strongly scattered such that they could be characterized by an effective electron temperature after traversing several hundred angstroms. The effective electron temperature, measured at 4.2 K, was found to be 150 K for a sample having a 900‐Å base region and 500 K for a sample having a 450‐Å base region.Keywords
This publication has 7 references indexed in Scilit:
- Dynamics of extreme nonequilibrium electron transport in GaAsIEEE Journal of Quantum Electronics, 1986
- Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance deviceJournal of Applied Physics, 1985
- High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1984
- Hot electron spectroscopyElectronics Letters, 1984
- Collector/emitter offset voltage in double-heterojunction bipolar transistorsElectronics Letters, 1984
- High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operationElectronics Letters, 1983
- A simplified model for graded-gap heterojunctionsSolid-State Electronics, 1975