Observation of threshold oxide electric field for trap generation in oxide films on silicon
- 15 June 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (12), 5882-5884
- https://doi.org/10.1063/1.340281
Abstract
Verwey’s bipolar/metal-oxide-silicon-field-effect-transistor structure is used to inject hot electrons into thermally grown wet oxide films on crystalline silicon by forward biasing the substrate emitter-base junction. Two components are separated from the threshold voltage shift: the electron charging of existing neutral oxide traps and the generation of new oxide traps. The density of the generated new oxide traps is found to increase rapidly and exponentially with increasing oxide electric field above 1.5 MV/cm. This threshold oxide field for oxide trap generation is consistent with the bond breaking energy of the hydrogen–silicon and hydrogen–oxygen bonds in the oxide film.Keywords
This publication has 13 references indexed in Scilit:
- Correlation of trap creation with electron heating in silicon dioxideApplied Physics Letters, 1987
- Direct measurement of the energy distribution of hot electrons in silicon dioxideJournal of Applied Physics, 1985
- Theory of high-field electron transport in silicon dioxidePhysical Review B, 1985
- Study of the atomic models of three donorlike defects in silicon metal-oxide-semiconductor structures from their gate material and process dependenciesJournal of Applied Physics, 1984
- Study of the atomic models of three donor-like traps on oxidized silicon with aluminum gate from their processing dependencesJournal of Applied Physics, 1983
- Generation-annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized siliconJournal of Applied Physics, 1983
- The effects of water on oxide and interface trapped charge generation in thermal SiO2 filmsJournal of Applied Physics, 1981
- Identification of electron traps in thermal silicon dioxide filmsApplied Physics Letters, 1981
- Nonavalanche injection of hot carriers into SiO2Journal of Applied Physics, 1973
- AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SiO2Applied Physics Letters, 1969