Effects of Zn cross diffusion on the properties of n (AlxGa1−xAs) -p (GaAs) heterojunctions
- 1 December 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (12), 5226-5228
- https://doi.org/10.1063/1.321590
Abstract
Properties of n (AlxGa1−xAs) ‐p (GaAs) heterojunctions grown by liquid‐phase epitaxial (LPE) techniques were investigated. It was found that an energy barrier in the form of a ’’spike’’ can be formed at the interface as a result of Zn out diffusion from the GaAs layer. When Ge was substituted for Zn as the p‐type dopant, no such energy barrier was observed. The results are interpreted in terms of the graded‐gap heterojunction model.Keywords
This publication has 5 references indexed in Scilit:
- A simplified model for graded-gap heterojunctionsSolid-State Electronics, 1975
- The graded-gap Alx Ga1 − x As–GaAs heterojunctionJournal of Applied Physics, 1972
- Scanning Electron Microscope Characterization of GaP Red-Emitting DiodesJournal of Applied Physics, 1972
- n-n Semiconductor heterojunctionsSolid-State Electronics, 1963
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962