Evidence of strong Auger recombination in semiconductor-doped glasses

Abstract

Intracavity nearly degenerate four-wave mixing has been used together with transmission measurements to evidence the important role played by Auger recombination in the relaxation rate of electron-hole pairs in semiconductor-doped glasses pumped by high laser intensities. Results show a shortening by a factor of 100 of the recombination carrier lifetime when the laser intensity is near damage threshold.