Electronic and optical properties of Fe-doped InP prepared by organometallic vapor-phase epitaxy
- 15 December 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (12), 4342-4344
- https://doi.org/10.1063/1.337432
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Characterization of GaAs epitaxial layers grown in a radiation heated Mo-CVD reactorJournal of Electronic Materials, 1981
- A model for the ∼ 1.10eV emission band in InPSolid State Communications, 1980
- Vapor pressure and third-law entropy of ferroceneJournal of Organometallic Chemistry, 1969