Reply to "Comment on `Role of atomic-scale roughness in surface-enhanced Raman scattering"'

Abstract

Otto argues that my original data can support his model for the importance of atomic-scale roughness (ASR) in surface-enhanced Raman scattering (SERS) if a process which he proposes for low-temperature film growth is used. This process is not supported by the resistivity data which he cites. Although several enhancement mechanisms probably do contribute to SERS, the conclusion of the original experiment, that enhancements due to ASR contribute less than ${10}^3$ of the effect, remains valid.