Noise and ionization rate measurements in silicon photodiodes
- 1 December 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (12), 987
- https://doi.org/10.1109/t-ed.1966.15880
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Low-frequency noise measurements in silicon avalanche photodiodesIEEE Transactions on Electron Devices, 1966
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966
- Noise in high speed avalanche photodiodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1965
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964