Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etching
- 1 May 1979
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (5), 3189-3196
- https://doi.org/10.1063/1.326355
Abstract
The extent to which gas‐surface chemical reactions can be enhanced by energetic radiation (primarily ions and electrons) incident on the surface is described. Emphasis is placed on chemical systems which lead to volatile reaction products. In particular, the reactions of Si, SiO2, and Si3N4 with XeF2, F2, and Cl2 are examined experimentally. Possible mechanisms for the radiation‐induced enhancement are discussed and some technological implications of this process in plasma etching technology and lithography are considered.Keywords
This publication has 30 references indexed in Scilit:
- Some comments on electron-beam-induced adsorptionJournal of Physics D: Applied Physics, 1977
- The electron stimulated interaction of H2O with a nickel surfaceSurface Science, 1977
- The influence of an electron beam on oxidation of polycrystalline nickel surfaces, monitored by disappearance potential spectroscopy (DAPS)Surface Science, 1976
- AES study of electron‐beam‐induced interactions between oxygen and the Ge(111) surfaceJournal of Applied Physics, 1976
- Electron-stimulated processes at solid surfacesJournal of Vacuum Science and Technology, 1976
- The chemical sputtering of graphite in an oxygen plasmaVacuum, 1976
- Contamination formed around a very narrow electron beamUltramicroscopy, 1976
- The interference of an electron beam with the surface reaction between oxygen and germaniumSurface Science, 1975
- Electron stimulated oxidation of GaAs, studied by quantitative auger electron spectroscopySurface Science, 1975
- RF Sputter-Etching by Fluoro-Chloro-Hydrocarbon GasesJapanese Journal of Applied Physics, 1974