Tunneling spectroscopy of In0.53Ga0.47As thin films
- 1 October 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (7), 772-774
- https://doi.org/10.1063/1.95399
Abstract
A surface accumulation layer of electrons is observed at the oxide‐In0.53Ga0.47As interface of Pb‐oxide‐In0.53Ga0.47As tunnel junctions, supporting the notion that metal‐semiconductor contacts with low work function metals form ideal ohmic contacts to n‐type In0.53Ga0.47As. The derivatives of the junction I‐V characteristics give directly the band edge energy of the surface electrons, their longitudinal optical phonon emission threshold, and, in a perpendicular magnetic field, their Landau levels with m*=(0.042±0.001)m0.Keywords
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